Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions

Mohammad Khaled Shakfa; Alexey Chernikov; Dimitri Kalincev; Sangam Chatterjee; Xianfeng Lu; Shane R. Johnson; Dan A. Beaton; Thomas Tiedje; Martin Koch

doi:10.1002/pssc.201200738

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Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions

Journal article

Peer reviewed

Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions

Mohammad Khaled Shakfa, Alexey Chernikov, Dimitri Kalincev, Sangam Chatterjee, Xianfeng Lu, Shane R. Johnson, Dan A. Beaton, Thomas Tiedje and Martin Koch

Physica status solidi. C, Vol.10(9), pp.1234-1237

09/2013

DOI: https://doi.org/10.1002/pssc.201200738

Abstract

carrier dynamics

dilute bismide semiconductors

quantum wells

time-resolved photoluminescence

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Title: Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions
Creators - without role: Mohammad Khaled Shakfa - Philipps University of Marburg
Alexey Chernikov - Philipps University of Marburg
Dimitri Kalincev - Philipps University of Marburg
Sangam Chatterjee - Philipps University of Marburg
Xianfeng Lu - Arizona State University
Shane R. Johnson - Arizona State University
Dan A. Beaton - University of British Columbia
Thomas Tiedje - University of Victoria
Martin Koch - Philipps University of Marburg
Publication Details: Physica status solidi. C, Vol.10(9), pp.1234-1237
Publisher: WILEY-VCH Verlag
Number of pages: 4
Identifiers: 9942515908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article