Abstract
The carriers temperatures are calculated for each lattice temperature from 150 to 450 K for a germanium semiconductor. The effects of the electron-lattice and electron-phonon interactions are investigated and proved that the carriers temperatures are higher than the lattice temperatures. The energy gap at 0 K, E-g (0), was calculated using different methods and an average error of 1% was found between the calculated values and the literature. An approximate analytical expression was introduced to describe the temperature dependence of the energy gap using the carriers temperature as a parameter of characterization.