Abstract
Zn0.95-xAlxMn0.05O (x=0, 0.03, 0.05, and 0.07) dilute magnetic semiconductor materials have been synthesized by sol-gel auto-combustion technique. The effect of Al doping on the structural, electrical, and magnetic properties has been investigated. X-ray diffraction studies demonstrate the existence of single phase characteristic hexagonal wurtzite type crystal structure, similar to the host ZnO, in all the synthesized compositions. Although, the microscopic images revealed that the grains were clustered, yet some individual grains could be seen to have hexagonal texture. Electrical resistivity was observed to decrease with the rise of temperature up to 450 degrees C, depicting the characteristic semiconductor behavior. Room temperature ferromagnetic behavior was observed in all the compositions. The value of saturation magnetization increased with the increase of Al concentration in ZnMnO system referred to the gradual enhancement of free carriers.