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Cathodoluminescence characterization of [11$ bar 2 $0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy
Journal article   Peer reviewed

Cathodoluminescence characterization of [11$ bar 2 $0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

K. Kusakabe, T. Furuzuki and K. Ohkawa
Physica status solidi. C, Vol.4(7), pp.2544-2547
06/2007

Abstract

68.55.Jk 78.60.Hk 81.05.Ea 81.15.Gh

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