Abstract
Room and low temperature cathodoluminescence (CL) of rare earth doped Bi4Ge3O12 (BGO) has been recorded. Luminescence signals noted in the wavelength range (300–800 nm) include intrinsic broad emission bands and signals related to Eu3+, Nd3+, and Tm3+. CL measurements made on Bi4Ge3O12 (BGO) doped with rare earth ions are reported for the temperature range 40 to 300 K with different CL excitation modulation frequencies. Dopant levels used in the present study are 1.1, 0.4, and 0.3 wt% Nd, 0.4 wt% Tm and 3 ppm Eu. All dopant levels exhibited different CL spectra with evidence for lines due to the rare-earth dopants intra-4f transitions. The temperature dependence of the intensity of the emission band is discussed.