Abstract
Electrochemically generated nanoporous tin oxide films have already been studied as photoanodes in photoelectrochemical water splitting systems. However, up to now, the most significant drawback of such materials was their relatively wide band gap (ca. 3.0 eV), which limits their effective performance in the UV light range. Therefore, here, we present for the first time an effective strategy for sensitization of porous anodic SnO
x
films with another narrow band gap semiconductor. Nanoporous tin oxide layers were obtained by simple one-step anodic oxidation of metallic Sn in 1 M NaOH followed by further surface decoration with CdS by the successive ionic layer adsorption and reaction (SILAR) method. It was found that the nanoporous morphology of as-anodized SnO
x
is still preserved after CdS deposition. Such SnO
x
/CdS photoanodes exhibited enhanced photoelectrochemical activity in the visible range compared to unmodified SnO
x
. However, the thermal treatment at 200 °C before the SILAR process was found to be a key factor responsible for the optimal photoresponse of the material.