Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping

Journal article

Peer reviewed

Kazuhiro Ohkawa, Takeshi Karasawa and Tsuneo Mitsuyu

Japanese Journal of Applied Physics, Vol.30(Part 2, No. 2A), pp.L152-L155

01/02/1991

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Title: Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
Creators - without role: Kazuhiro Ohkawa - Central Research Laboratories
Takeshi Karasawa - Central Research Laboratories
Tsuneo Mitsuyu - Central Research Laboratories
Publication Details: Japanese Journal of Applied Physics, Vol.30(Part 2, No. 2A), pp.L152-L155
Identifiers: 9942417408331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article