Abstract
Cupric oxide (CuO) films were deposited on MgO(1 0 0) substrates by two different pulsed laser deposition (PLD) configurations, molecular gas background and RF-plasma assisted, at temperatures over 250-450 degrees C range. The films were characterized by X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), ellipsometery, and four probe conductivity measurements. The heating temperature was found to have a limited effect on the structural properties of the films grown in RF-plasma assisted background while it has a significant effect in the case of the standard gas background. The structural observations revealed that RF-plasma background increased the possibility of Frank-van der Merwe or the initial stages of Stranski-Krastanov growth mode, leaving the CuO films highly textured in (1 1 1) direction, atomically smooth and chemically stoichiometric. Optoelectronic properties of best obtained CuO film are presented as well. (C) 2013 Elsevier B. V. All rights reserved.