Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

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Makoto Miyoshi, Masahiro Sakai, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Mitsuhiro Tanaka, Osamu Oda and O ODA

Japanese Journal of Applied Physics, Vol.43(12), pp.7939-7943

01/12/2004

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Title: Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
Creators - without role: Makoto Miyoshi - Nagoya Institute of Technology
Masahiro Sakai - Nagoya Institute of Technology
Subramaniam Arulkumaran - Nagoya Institute of Technology
Hiroyasu Ishikawa - Nagoya Institute of Technology
Takashi Egawa - Nagoya Institute of Technology
Mitsuhiro Tanaka - NGK Insulators
Osamu Oda - NGK Insulators
O ODA - King Saud Bin Abdulaziz University for Health Sciences
Publication Details: Japanese Journal of Applied Physics, Vol.43(12), pp.7939-7943
Identifiers: 9921025408331
Academic Unit: King Saud Bin Abdulaziz University for Health Sciences
Language: English
Resource Type: Journal article