Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source

S. R. Wilson; R. B. Gregory; W. M. Paulson; H. T. Diehl; A. H. Hamdi; F. D. McDaniel; Semi conductor Research and Development Lab, Motorola, Inc., 5005 E. McDowell Road, Phoenix, AZ 85008

doi:10.1109/TNS.1983.4332627

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Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source

Journal article

Peer reviewed

Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source

S. R. Wilson, R. B. Gregory, W. M. Paulson, H. T. Diehl, A. H. Hamdi, F. D. McDaniel and Semi conductor Research and Development Lab, Motorola, Inc., 5005 E. McDowell Road, Phoenix, AZ 85008

IEEE transactions on nuclear science, Vol.30(2), pp.1734-1737

01/04/1983

DOI: https://doi.org/10.1109/TNS.1983.4332627

Abstract

Annealing

Boron

Electron beams

Impurities

Infrared heating

Ion implantation

Isothermal processes

Silicon

Surface emitting lasers

Temperature

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Title: Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source
Creators - without role: S. R. Wilson - Semiconductor Research and Development Laboratory Motorola, Inc. 5005 E. McDowell Road, Phoenix, AZ 85008
R. B. Gregory - Motorola
W. M. Paulson - Motorola
H. T. Diehl - Motorola
A. H. Hamdi - Texas State University
F. D. McDaniel - University of North Texas
Semi conductor Research and Development Lab, Motorola, Inc., 5005 E. McDowell Road, Phoenix, AZ 85008
Publication Details: IEEE transactions on nuclear science, Vol.30(2), pp.1734-1737
Publisher: IEEE
Identifiers: 9933946808331
Academic Unit: University of Tabuk
Language: English
Resource Type: Journal article