Abstract
The nickel (Ni) electroless plating process is an encouraging method for selectively depositing Ni onto silicon (Si) wafers to form front electrodes of Si solar cells. Ni has the ability to block diffusion in copper (Cu), which is used for further thickening of the Ni contacts. The contact between Ni and Si can be optimized by an additional sintering step to form nickel-silicide (NiSix). This paper presents the characterization of NiSix according to bath conditions, deposition time, and sintering process. The selective electroless deposition of Ni was achieved by plating from an alkaline nickel chloride (NiCl2) bath with ammonia as the pH control and sodium hypophosphite as the reducing agent. Thin clusters of Ni were deposited on top of Si, which ensured the formation of uniform Ni seed layers with better surface coverage on both textured and non-textured Si surfaces. The dominant phase of NiSi that offered the lowest series resistance was confirmed by X-ray diffraction (XRD) analysis at sintering temperatures of 350 degrees C and 400 degrees C. Selective deposition of Cu over the Ni seed layer was achieved by light induced plating arrangements, and thin finger lines with widths up to 28.4 mu m were realized.