Abstract
We have synthesize and characterize Si quantum dots prepared at 10, 15 and 20 Torr working pressure of Ar having fixed substrate temperatures 133 K using physical vapour condensation technique. The Si quantum dots were investigated by FESEM, TEM, XRD, UV-visible and PL spectroscopy. The studies on x-ray diffraction indicate the amorphous texture of Si quantum dots. TEM studies show that the synthesized quantum dots have an average size in between 5 to 9 nm. The optical absorbance studies on thin films of Si quantum dots shows direct band gap. The PL spectra indicate a sharp peak at 432 nm, which confirms the developments of Si quantum dots. The dc conductivity ( dc) was measured on thin films of Si quantum dots from 303 K to 454 K and found to increase exponentially with increasing temperature. This designates that the conduction in Si quantum dots is owed to activation procedure and representing the semiconductor nature.