Abstract
ZnSe single crystal of size similar to 25 mm lengths and similar to 10 mm diameter was grown by vertical Bridgman technique using two zone tubular furnace from the synthesized polycrystal of the compound. The powder X-ray diffraction analysis confirmed the crystal system of the grown crystal. The optical band gap of the grown crystal was calculated and found to be similar to 2.704 eV by UVavisaNIR analysis. The crystalline perfection was assessed by using high-resolution X-ray diffractometer (HRXRD) and chemical etching studies which reveals that the grown crystal has good crystalline perfection. The etch pit dislocation density was calculated and found to be 2 X 106 cm-2. Good crystalline perfection and less dislocation density of the grown crystals makes, it important for optoelectronic device fabrications. The dielectric studies were also done over a wide range of frequency 100 Hz to 10 MHz at room temperature.