Abstract
Synthesis of ZnTe has been done by solid state reaction using 99.99% pure Zn and Te. The large size (∼50mm length and ∼19mm dia.) single crystal of the titled compound was grown by Vertical Bridgman Technique (VBT) using two zone tubular furnace. To confirm the crystal system of the grown crystal the single crystal and powder X-ray diffraction analysis were carried out. The optical band gap of the grown crystal was calculated and found to be ∼2.26eV. The crystalline perfection was assessed by using high-resolution X-ray diffractometer (HRXRD) and chemical etching studies and reveals that the grown crystal has good crystalline perfection. The etch pit dislocation density was calculated and found to be 4×103cm−2. The dielectric measurement was also carried out over a wide range of frequency (100Hz to 10MHz) at ambient temperature.