Abstract
Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (
x
) from 11% up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (
Z*T
) values of the n-Al
1−x
In
x
N alloys were measured as high as 0.391 up to 0.532 at T=300 K. The use of high In-content (
x
=21.34%) AlInN alloys leads to significant reduction in thermal conductivity [
κ
=1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor.