Charge states of interstitial defects in implanted silicon and their annealing temperatures

Journal article

Peer reviewed

M Jadan, N. I Berezhnov and A. R Chelyadinskii

Physica status solidi. B. Basic research, Vol.189(1), pp.K1-K4

01/05/1995

Abstract

Condensed matter: structure, mechanical and thermal properties

Defects and impurities in crystals; microstructure

Doping and impurity implantation in germanium and silicon

Exact sciences and technology

Physics

Structure of solids and liquids; crystallography

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Title: Charge states of interstitial defects in implanted silicon and their annealing temperatures
Creators - without role: M Jadan - Belarusian State University
N. I Berezhnov - Belarusian State University
A. R Chelyadinskii - Belarusian State University
Publication Details: Physica status solidi. B. Basic research, Vol.189(1), pp.K1-K4
Publisher: Wiley
Identifiers: 9914518808331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article