Abstract
•Tl2GaInSe4 crystal was prepared by a special design based on Bridgman technique.•The Hall coefficient indicates that the Tl2GaInSe4 has the p-type conductivity.•The acceptor level is located at 0.33eV above the valance band of Tl2GaInSe4.
Electronic transport properties of Tl2GaInSe4 prepared by Bridgman technique have been investigated by Dc electrical conductivity and Hall coefficient measurements. Tl2GaInSe4 crystal was prepared by a special design based on Bridgman technique.
The conductivity, Hall mobility and carrier concentration of the Tl2GaInSe4 were investigated as a function of temperature. The Hall coefficient indicates that the Tl2GaInSe4 has the p-type conductivity. The values of the electrical conductivity , Hall coefficient , and carrier concentration and Hall mobility at room temperature were 1.826×10−5Ω−1cm−1, 13.3×108cm3/C and 4.7×109cm−3 and 2.43×104cm2v−1s−1, respectively. The analysis of the temperature dependent electrical conductivity and carrier concentration reveal that the acceptor level is located at 0.33eV above the valance band of Tl2GaInSe4.
The obtained electrical results indicate that the prepared Tl2GaInSe4 sample is a p-type semiconductor and it can be used for electronic device applications.