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Chemical vapor deposition and electrical characterization of sub-10 nm diameter InSb nanowires and field-effect transistors
Journal article   Peer reviewed

Chemical vapor deposition and electrical characterization of sub-10 nm diameter InSb nanowires and field-effect transistors

Rajat Kanti Paul, Miroslav Penchev, Jiebin Zhong, Mihrimah Ozkan, Maziar Ghazinejad, Xiaoye Jing, Emre Yengel and Cengiz S. Ozkan
Materials chemistry and physics, Vol.121(3), pp.397-401
01/06/2010

Abstract

Crystal structure CVD Field-effect transistor InSb nanowires Semiconductor

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