Abstract
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•Drop-casted OSC grains are rectangular-shaped.•Grains are parallel to each other over a small region.•The circular structure averages the grain-dependent variations.•Top-gate bottom-electrode OTFT’s are fabricated for a higher injection efficiency.•The reason for the lower variation is also analyzed.•Our fabrication result also supports our analysis/hypothesis.
Circular organic thin film transistor (OTFT) structures are proposed to reduce the impact of variable grain alignment on the drive current of the polycrystalline organic thin film transistor (OTFT). As the circular structure is planar symmetric, the orientation of the grain cannot affect the drive current of the circular OTFT. Thus, circular electrodes expected to provide a lower variation. Top-gate, bottom-contact circular and conventional OTFTs with drop-casted polycrystalline 6,13-Bis(triisopropyl-silylethynyl) (TIPS)-Pentacene organic semiconducting layer (OSC) are fabricated to verify the theoretical variation reduction. The relative standard deviation (RSD), defined as the ratio of standard deviation and the average of drive current is used as the degree of variations in different structures. According to our fabrication result, circular transistors have a significantly lower variation (20% RSD), compared to the variation of conventional OTFTs (61% RSD).