Abstract
We report on the further investigation of the effect of boron incorporation on GaAs grown at 580 degrees C temperature on GaAs (001) substrate by metal organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD) has been used to determine the lattice mismatch and to estimate the boron concentration. Temperature-dependent photoluminescence has been carried out to investigate BxGa1-xAs/GaAs epilayers with varied boron composition (x = 1.64% and 3.04%). Low temperature (10 K) PL study has shown an asymmetric and broad PL band around 1.3 eV of the emission energies with a decrease of the PL intensity with increasing boron composition. The evolution of the emission energies with temperature can be described by Varshni law for the high temperature range (T >= 120 and 80 K) for boron composition x = 1.64% and 3.04%, respectively, while a relative discrepancy has been found to occur at low temperature. Moreover, depending on the temperature range, the PL intensity quenching is found to be thermally ensured by three activation energies. These results are attributed to the localized states induced by the non-uniform insertion of boron and the clustering of the boron atom in BGaAs bulk. (C) 2009 Elsevier B.V. All rights reserved.