Abstract
This paper examines individual radiation effects caused by 110 keV electrons, 70 keV protons and 170 keV protons, and combined radiation effects induced by 110 keV electrons together with 70 keV protons and 110 keV electrons with 170 keV protons on the forward current gain of bipolar junction transistors (3DG112D, NPN). Key parameters were measured in-situ and the change in current gain of the NPN transistors is obtained at a fixed collector current. Experimental results show that the current gain degradation of the NPN transistors is sensitive to both of ionization and displacement damage. The ionization damage is primarily caused by 110 keV electrons, while the displacement damage is mainly induced by 170 keV protons in this study. Under the combined exposure of 170 keV protons and 110 keV electrons, the current gain degradation lies between those given by the individual irradiations. The current gain degradation is mainly caused by the 170 keV protons, and the 110 keV electrons mitigate the degradation to some extent. In the case of combined irradiation of 110 keV electrons and 70 keV protons, no synergistic effect occurs, the current gain degradation is basically controlled by the 110 keV electrons.