Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

Journal article

Peer reviewed

M. A Belaïd, K Ketata, M Gares, K Mourgues, M Masmoudi and J Marcon

Microelectronics and reliability, Vol.47(1), pp.59-64

2007

Abstract

Applied sciences

Compound structure devices

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests
Creators - without role: M. A Belaïd - Université de Rouen Normandie
K Ketata - Université de Rouen Normandie
M Gares - Université de Rouen Normandie
K Mourgues - Université de Rouen Normandie
M Masmoudi - Université de Rouen Normandie
J Marcon - Université de Rouen Normandie
Publication Details: Microelectronics and reliability, Vol.47(1), pp.59-64
Publisher: Elsevier
Identifiers: 9930924408331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Journal article