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Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots
Journal article   Peer reviewed

Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots

Guodong Wang, Baolai Liang, Bor-Chau Juang, Aparna Das, Mukul C Debnath, Diana L Huffaker, Yuriy I Mazur, Morgan E Ware and Gregory J Salamo
Nanotechnology, Vol.27(46), pp.465701-465701
18/11/2016
DOI: https://doi.org/10.1088/0957-4484/27/46/465701
PMID: 27749272

Abstract

carrier transfer photoluminescence quantum dots semiconductor compound
The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.

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