Abstract
Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than similar to 0.04% for applied strains of similar to 10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. (c) 2008 American Institute of Physics.