Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells

Guan Sun; Ruolin Chen; Yujie Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

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Journal article

Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells

Guan Sun, Ruolin Chen, Yujie Ding, Hongping Zhao, Guangyu Liu, Jing Zhang and Nelson Tansu

IEEE Conferences, pp.1-2

01/06/2013

Abstract

Conferences

Electro-optics

Indium gallium nitrides

Lasers

Photoluminescence

Quantum wells

Separation

Trends

We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.

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Title: Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells
Creators - without role: Guan Sun
Ruolin Chen
Yujie Ding
Hongping Zhao
Guangyu Liu
Jing Zhang
Nelson Tansu
Publication Details: IEEE Conferences, pp.1-2
Identifiers: 9943081008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article