Abstract
An extensive photoreflectance (PR) and photoluminescence (PL) study is done on an undoped n-type and p-type InAlAs metalorganic vapor phase epitaxy (MOVPE) grown layers on Fe-doped semi-insulating (SI)-InP substrates. A p-type doping with doping concentration of (1.57 × 10
18
cm
−3
) at a growth temperature of 560 °C and V/III ratio of 50 is achieved. Photoluminescence (PL) spectra show a significant improvement in peak intensity of the type II transition for the Mg-doped InAlAs sample proving a better quality of the interface. Moreover, the abundant narrow satellite peaks of X-ray diffraction and the reciprocal space mapping recorded in the vicinity of (004) using high resolution X-ray diffraction (HRXRD) demonstrate a good quality of interfaces. Besides, photoreflectance spectroscopy (PR) at room temperature is useful to experimentally establish the valence-band splitting, a band-gap energy of InP substrate and InAlAs layers. A good correlation between experimental results was obtained.