Abstract
Magnetization reversal in ultra-thin Au/Co/Au films deposited on single crystal silicon (1 0 0) was investigated using Kerr microscopy. In the considered ultra-thin Co films, with a thickness between 0.7 and 1 nm, the coercivity and magnetic anisotropy decrease with decrease in cobalt layer thickness and the magnetization reversal dynamics is dominated by disordered domain wall motion. An analysis of the observed magnetization reversal dynamics is proposed, starting from the Fatuzzo-Labrune model. We show that the relaxation curves of these samples are well described by a function obtained by a technical transformation of Fatuzzo-Labrune model in the regime dominated by domain wall motion.