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Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy
Journal article   Peer reviewed

Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki
Journal of crystal growth, Vol.310(23), pp.4996-4998
15/11/2008
DOI: https://doi.org/10.1016/j.jcrysgro.2008.08.005

Abstract

Crystallography Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Science & Technology Technology
We investigated the electrical properties of Mg-doped a-plane Ga1-xInxN (0<x<0.10) films grown on low-dislocation-density-undoped GaN templates on +0.5 degrees-off r-plane sapphire substrates by metalorganic vapor-phase epitaxy. The maximum hole concentration of 8.3 x 10(18) cm(-3) for x = 0.10 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.90In0.10N was as low as 50 meV. (C) 2008 Elsevier B.V. All rights reserved.

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