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Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture
Journal article   Peer reviewed

Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture

Wentao Xu, Lihua Wang, Yiwen Liu, Simil Thomas, Hong-Kyu Seo, Kwang-Ik Kim, Kwang S. Kim and Tae-Woo Lee
Advanced materials (Weinheim), Vol.27(9), pp.1619-1623
04/03/2015
DOI: https://doi.org/10.1002/adma.201405353
PMID: 25605377

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethylcobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single-or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene.

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