Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

Journal article

Peer reviewed

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière and H. Maaref

European physical journal. Applied physics, Vol.55(3), pp.30101-1-4

01/09/2011

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Title: Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
Creators - without role: M. Gassoumi - University of Monastir
S. Saadaoui - University of Monastir
M.M. Ben Salem - University of Monastir
Christophe Gaquière - Institute of Electronics, Microelectronics and Nanotechnology
H. Maaref - University of Monastir
Publication Details: European physical journal. Applied physics, Vol.55(3), pp.30101-1-4
Publisher: EDP Sciences
Identifiers: 9922887708331
Academic Unit: King Khalid University
Language: English
Resource Type: Journal article