Abstract
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide band gap devices. In this paper, we present a detailed study of drain Current Deep Level Transient Spectroscopy CDLTS measurements performed on InAlAs/InGaAs/InP HEMT of two different samples. We demonstrate that a remarkable correlation exists between deep levels observed by CDLTS and the presence of parasitic effects such as kink and hysteresis effects.