Coulomb energy and correlation of inversion-layer electrons in metal-oxide-semiconductor field-effect transistor devices

Journal article

A Widom and R Tao

Physical review. B, Condensed matter, Vol.38(15), pp.10787-10790

1988

Abstract

Applied sciences

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

1 Record Views

Title: Coulomb energy and correlation of inversion-layer electrons in metal-oxide-semiconductor field-effect transistor devices
Creators - without role: A Widom - Northeastern University
R Tao - Northeastern univ., dep. physics, boston MA 02115, United States
Publication Details: Physical review. B, Condensed matter, Vol.38(15), pp.10787-10790
Publisher: American Physical Society
Identifiers: 9943239608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article