Abstract
The present work describes the synthesis of indium oxide nanocubes (NCs) by a modified sol-gel method and its thin film was deposited by spray pyrolysis method. The sample was characterized by x-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), field emission transmission electron microscope (FE-TEM), fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) techniques in detail. The temperature dependent resistivity of indium oxide thin film was determined in the temperature range of 77 - 350 K which exhibited semiconducting behavior of the sample. The resistivity data were fitted in the Mott's variable range hopping (VRH) model and the density of states was estimated.