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Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
Journal article   Peer reviewed

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

M. Lanza, M. Porti, M. Nafria, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, …
Microelectronic engineering, Vol.86(7-9), pp.1921-1924
01/07/2009
DOI: https://doi.org/10.1016/j.mee.2009.03.020

Abstract

Engineering Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. (C) 2009 Elsevier B.V. All rights reserved.

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