Abstract
Long-term operational photovoltaic devices might be produced utilizing perovskites made of inorganic cesium lead halide, which have excellent thermal endurance in the air. Lead perovskite reaches power conversion efficiency (PCE) reaches 23% in 2022. The limitation of alpha-CsPbI3 (cubic phase) that has an appropriate bandgap is its volatility with time. As a result, using HPbI3 instead of PbI2 in a single-step deposition process, exceptionally stable alpha-CsPbI3 may be generated in dry air. Most notably, using CsPbI3 as an interfacial layer on perovskite after 3000 h of dry air storage, non-capsulated devices maintain approximately 90% of their initial PCE. Although much work has gone into improving the stability and then efficiency of perovskite solar cells (PSCs) controlling the interfacial charge transfer in PSCs with interface engineering can assist achieve high efficiency and stability. alpha-CsPbI3 quantum dots (QDs) can increase the PSCs properties by functioning as a bridge over the hole transport material and in contact with the perovskite film layer. By depositing inorganic CsPbI3 QDs with excellent moisture stability onto the perovskite layer and the interface engineering layer, the PCE increased from 15.17% to 23% in 2018 and 2022, respectively. The toxicity of lead, on the other hand, makes a huge challenge for the spreading of lead PSCs in a wide application. As a result, researchers are looking toward replacing Pb with equivalent metals based on first-principles predictions with sufficient band gap, optical, and electrical properties. CsSnI3 represents replaceable materials with good dispersion and high uniform formation. Using Sn-based PSCs have PCE values of 14.81% in 2022, but using CsSnI3 as an interfacial layer in the PSCs, the efficiency reaches 20%. The other halide Cl-, Br-, and F- can be partially inserted in this molecule or replace I- anion, this led to a variety of product results for the prepared PSC, but this efficiency is less than using only I- ions. After a big study, CsSnI3 is a promising interfacial for the PSC with a lifetime of >1000 h. Now, scientists and searchers use all possibilities for increasing the device efficiency to be applicable in the industrial field. This is carried out by controlling the size of CsSnI3 particles that are used as an interfacial layer, at the other hand, controlling the size will be promising for reaching the desired efficiency and stability for the PSCs device.