Abstract
This research work introduces the growth of CuGaSnS4/n-Si heterojunction using a spray pyrolysis procedure on a prewashed n-type silicon substrate. The X-ray diffraction (XRD) investigations presented an orthorhombic single phase of the CuGaSnS4 thin films. The surface morphologies of CuGaSnS4 samples were fixed via the field emission scanning electron microscope, FE-SEM which depicted a homogeneous surface for the investigated films and the EDAX pattern of CuGaSnS4 films confirms the presence of copper, gallium, tin and sulfur atoms with an atomic ratio near to 1:1:1:4. The dark current-voltage investigations were hired to estimate the heterojunction parameters like the diode ideality factor values (n), shunt resistance values (R-sh) and the effective barrier height (phi(b)). The studied heterojunction revealed good rectifying behavior through the dark current-voltage curves. Also, capacitance-voltage investigations in dark conditions were used to evaluate the built-in voltages and the net carrier concentration. Many interesting photovoltaic parameters have been estimated for the studied heterojunction such as the solar efficiency (eta), the fill factor (FF) and open-circuit voltage (V-OC). Moreover, the solar efficiency (eta) of the CuGaSnS4/n-Si heterojunction has been inspected using current-voltage measurements under illumination and we found that the CuGaSnS4/n-Si heterojunction revealed solar efficiency equal 1.52%.