Abstract
The Sb2Se3 thin film was successfully deposited on the n-Si substrate using an electron beam evaporated technique. The structural investigation was done by means of x-ray diffraction analysis. The surface morphology and elemental analysis of the synthesized films were studied by FESEM and EDAX, respectively. The electrical properties of the Sb2Se3/n-Si heterojunction were considered by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V results of Sb2Se3/n-Si heterojunction diode show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The capacitance-voltage results show the abrupt nature of the junction under consideration.