Abstract
In this work, the analysis of electrical properties Au/n-Ge(10)Se(80)ln(10)/P-Si/Al heterojunction is studied. The dark forward current-voltage characteristics showed a thermoionic emission mechanism at low voltages (V <= 0.4 V) followed by a SCLC mechanism at high voltages (V <= 0.5 V). The junction parameters like series resistance, rectification ratio, ideality factor, effective barrier height, and total trap concentration were determined. The capacitance-voltage (C-V) characteristics of n-Ge(10)Se(80)ln(10)/P-Si devices were also investigated. The barrier height value obtained from the C-V measurements was found to be 0.56 eV. Solar cell parameters were also evaluated under illumination of 6 mW/cm(2) and the power conversion efficiency was estimated as 1.5%. (C) 2014 Elsevier Ltd. All rights reserved.