Abstract
Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature 4H-SiC devices for high power/temperature and switching application. In this paper, DC and switching characteristics of TI-VJFETs has been studied using 2D Sentaurus TCAD with variation of channel width (0.81 similar to 0.93 mu m), gate-drain capacitance (1 similar to 50 pF) and temperature (RT similar to 200 degrees C). It was found that increase in channel width forward current increase from 3.99 A to 5.77 A due to decrease in on-resistance with increase in conduction path while blocking voltage decrease from 850 V to 175 V due to decrease in depletion region width. For switching analysis, switching time and energy loss increase with increase in gate drain capacitance. For temperature increase RT to 200 degrees C, turn-on and energy loss (3 similar to 5 ns & 1.8 similar to 3 mu J) increased while turn-off and energy loss (9 similar to 6ns & 5.4 similar to 3.6 mu J) decreased.