Abstract
Undoped semiinsulating (SI) InP samples, subjected to one-step and multi-step wafer annealing, and lightly and normally Fe-doped SI InP samples without annealing are characterized by thermally stimulated current (TSC) spectroscopy. A dominant deep center at 0.63 eV is found in all samples and is due to Fe. Two prominent TSC traps in undoped SI InP are thought to be related to the P antisite, PSUBIN, and traps at low temperatures to the P vacancy, V subP. 17 refs.