Abstract
A film of SnPcCl2 was deposited by thermal evaporation on p-Si single crystal substrate to fabricate an organic/inorganic n-SnPcCl2/p-Si heterojunction. Electrical properties of the fabricated cell were investigated by performing the measurements of capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The fabricated cell was characterized by a contact barrier of 0.55 eV and a rectification ratio of 229, calculated at +/- 1 V. The dark J-V measurements suggested that the forward current in this junction involves thermionic mechanisms, while at relatively high applied voltage; a space-charge limited current mechanism was operated. The photovoltaic conversion properties of the junction were also studied by carrying out the I-V measurements under illumination of 100 mW cm(-2) and power conversion efficiency of 3.05 % has been achieved. The other cell parameters, the short-circuit current density J (sc), the open-circuit voltage V (oc) and the fill factor FF, were determined at room temperature to be 14.43 mA/cm(2), 0.50 V and 0.422 respectively. The temperature-dependence of these parameters was also investigated in the temperature range of 300-380 K.