Abstract
In this work, the decay of secondary-electron emission (SEE) intensity and charging of hydrogenated and hydrogen-free diamond film surfaces subjected to incident electron irradiation at energies between 5 and 20 eV are investigated. Electron emission curves as a function of incident electron energy were measured. For the hydrogenated films, it was found that the SEE intensity decays in intensity under continuous electron irradiation, albeit maintains a nearly constant onset. The decay in time of the SEE intensity was measured for various incident electron energies. From these measurements, the SEE intensity decay rate from the hydrogenated diamond surface was calculated as a function of incident electron energy and found to display a broad peak at similar to9 eV. The decay of the SEE intensity is explained as due to electron trapping in the near-surface region of the hydrogenated diamond films resulting in the formation of a depletion layer and upward surface band bending while overall charge neutrality is maintained. It is suggested that the mechanism of charge trapping is by resonant electron attachment of incident electrons into C-H (ads) bonds present within the near-surface region of the hydrogenated diamond films which displays a similar dependence on incident electron energy. Upward band bending results in a surface potential barrier to secondary electrons created within the solid. For the hydrogen-free diamond surface, decay in intensity and a positive shift in the onset of the SEE were observed for all incident electron energies and currents used. It was found that surface charging increases monotonically with incident electron energy. In this case, charging is associated with electron trapping into localized surface states of pi(*) symmetry. These electronic states are associated with surface reconstruction resulting from hydrogen desorption. (C) 2002 American Institute of Physics.