Abstract
Deep-ultraviolet lasing was achieved at 243.5 nm from an AlxGa1-xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm(2) with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795719]