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Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-well laser
Journal article

Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-well laser

Hery S. Djie, Yang Wang, Boon S. Ooi, Dong-Ning Wang, James C. M. Hwang, Gerard T. Dang and Wayne H. Chang
IEEE photonics technology letters, Vol.18(21-24), pp.2329-2331
15/11/2006
DOI: https://doi.org/10.1109/LPT.2006.885301

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We report the improvement of similar to 1.62-mu m wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degrees C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.

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