Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes (vol 8, 015005, 2018)

Journal article

Open access

Peer reviewed

Muhammad Usman, Kiran Saba, Dong-Pyo Han, Nazeer Muhammad, Shabieh Farwa, Muhammad Rafiq and Tanzila Saba

AIP advances, Vol.8(3)

01/03/2018

Abstract

Materials Science

Materials Science, Multidisciplinary

Nanoscience & Nanotechnology

Physical Sciences

Physics

Physics, Applied

Science & Technology

Science & Technology - Other Topics

Technology

url

https://doi.org/10.1063/1.5030116View

Published (Version of record) Open

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Title: Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes (vol 8, 015005, 2018)
Creators - without role: Muhammad Usman - Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Kiran Saba - Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Dong-Pyo Han - Meijo University
Nazeer Muhammad - COMSATS University Islamabad
Shabieh Farwa - COMSATS University Islamabad
Muhammad Rafiq - COMSATS University Islamabad
Tanzila Saba - Prince Sultan University
Publication Details: AIP advances, Vol.8(3)
Publisher: Amer Inst Physics
Number of pages: 1
Identifiers: 9927296308331
Academic Unit: Prince Sultan University
Language: English
Resource Type: Journal article