Abstract
Here we report InGaN-based red light-emitting diodes (LEDs) grown on ((2) over bar 01) beta-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence. (C) 2020 The Japan Society of Applied Physics