Abstract
Cu2ZnSnS4 (CZTS) thin films were fabricated as solar cell absorber layers via sequential electrodeposition method using a flexible copper plate as substrate. The CZTS thin films were grown with different copper salt concentrations and sulfurized in elemental sulfur vapor. The morphological, structural, compositional, and electrical properties of the films were investigated using X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy, as well as by Raman scattering and Hall effect measurements. The results showed that the CZTS properties depend on the copper concentration in the precursor. The XRD patterns of the precursor showed the preferred orientation of the (112), (220), and (312) phases. The thin film showed a p-type conductivity, with a carrier concentration between 9.56 x 10(16) cm(-2) and 3.66 x 10(17) cm(-2), depending on the composition of the precursor mixture.