Dependence of the structural relaxation of amorphous silicon on implantation temperature

Journal article

Peer reviewed

J.-F Mercure, R Karmouch, Y Anahory, S Roorda and F Schiettekatte

Physical review. B, Condensed matter and materials physics, Vol.71(13), pp.134208.1-134205.7

01/04/2005

Abstract

Amorphous semiconductors, metals, and alloys

Condensed matter: structure, mechanical and thermal properties

Disordered solids

Exact sciences and technology

Physics

Structure of solids and liquids; crystallography

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Title: Dependence of the structural relaxation of amorphous silicon on implantation temperature
Creators - without role: J.-F Mercure - Regroupement Québécois sur les Matériaux de Pointe
R Karmouch - Regroupement Québécois sur les Matériaux de Pointe
Y Anahory - Regroupement Québécois sur les Matériaux de Pointe
S Roorda - Regroupement Québécois sur les Matériaux de Pointe
F Schiettekatte - Regroupement Québécois sur les Matériaux de Pointe
Publication Details: Physical review. B, Condensed matter and materials physics, Vol.71(13), pp.134208.1-134205.7
Publisher: American Physical Society
Identifiers: 9917164808331
Academic Unit: Jazan University
Language: English
Resource Type: Journal article