Abstract
Abstract Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p − type germanium dioxide coated onto Au/ n-CdSe substrates and top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out with the help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers of CdSe and GeO2. The design of the energy band diagram has shown the formation of two Schottky arms (Au/ n − CdSe, C/GeO2) at the interfaces of the n − CdSe/ p − GeO2 layers. The capacitance-voltage characteristics which are recorded in the frequency domain of 1.0-50.0 MHz revealed the ability of formation of NMOS and PMOS layers. The signal frequency controlled built in potential is tunable in the range of 2.34 and 5.18 eV. In addition, the conductance and capacitance spectral analyses in the frequency domain of 10-1800 MHz revealed the domination of current conduction by tunneling and correlated barriers hoping below and above 760 MHz, respectively. In addition to its features as MOSFET devices, the Au/CdSe/GeO2/C hybrid devices are found to be appropriate for use as microwave cavities.