Abstract
In this study, we concentrate on the design and characterization of the hybrid isotype (Au, Yb)/ZnS/InSe/C devices. The thin film devices that are prepared by using the vacuum deposition technique are characterized by means of x-ray diffraction, energy dispersive x-ray analysis, optical and dielectric spectroscopy, current-voltage characteristics and impedance spectroscopy techniques. The techniques allow determining the preferred crystallinity at the interfaces, the lattice match/mismatch ratios, the atomic compositions, the energy band gap shifts, the valence and conduction band offsets, the barrier heights at the Schottky shoulders (Au/ZnS and InSe/C) of the hybrid structure and the plasmonic interaction at the ZnS/InSe and (Au, Yb)/ZnS/InSe interfaces. The hybrid isotype device is found to exhibit photosensing features presented by a responsivity of similar to 2.0 A/W, external quantum efficiencies (EQE) and internal quantum efficiencies (IQE) of 395% and 2493%, at basing voltage of 0.3 V, respectively. In addition, the dielectric spectra modeling reveals a plasmon-electron interaction of resonance frequencies in the range of 0.31-5.26 GHz and drift mobility of similar to 212 cm(2)/Vs and 106 cm(2)/Vs for the Au/ZnS/InSe and Yb/ZnS/InSe, respectively. Moreover, the impedance spectroscopy studies confirm the correctness of the dielectric modeling nominating the Yb/ZnS/InSe/C devices as photodetectors, plasmon resonators and microwave cavities.